| 主权项 |
1. An electrostatic discharge protection clamp adapted to limit a voltage appearing across protected terminals of an integrated circuit to which the electrostatic discharge protection clamp is configured to be coupled, comprising:
a substrate; and a first electrostatic discharge protection device over the substrate, the first electrostatic discharge protection device including:
a buried layer over the substrate, the buried layer having a first region having a first doping concentration and a second region having a second doping concentration, the first doping concentration being greater than the second doping concentration;a first transistor over the buried layer, the first transistor having an emitter coupled to a first cathode terminal of the electrostatic discharge protection clamp; anda second transistor over the buried layer, the second transistor having an emitter coupled to a first anode terminal of the electrostatic discharge protection clamp, wherein a collector of the first transistor and a collector of the second transistor are over the first region of the buried layer. |
