SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

主权项

1. A semiconductor light emitting device comprising:
a first semiconductor layer of a first conductivity type having a first surface and a second surface on an opposite side to the first surface; a second semiconductor layer of a second conductivity type provided on a side of the second surface of the first semiconductor layer; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a dielectric layer in contact with the second surface, the dielectric layer having a refractive index lower than a refractive index of the first semiconductor layer; a first electrode including a first portion and a second portion,
the first portion being in contact with the second surface, the first portion being provided adjacent to the dielectric layer,the second portion being in contact with an opposite side of the dielectric layer from the first semiconductor layer; and a second electrode having a contact portion,
the contact portion being in contact with an opposite side of the second semiconductor layer from the light emitting layer.