发明名称 SPUTTER DEVICE
摘要 There is provided a sputter device in which a conductive target having a planar and circular shape is disposed so as to face a workpiece substrate mounted on a mounting part located within a vacuum chamber, includes: a direct current power supply configured to apply a negative direct current voltage to the target; an opposing electrode installed at the opposite side of the workpiece substrate from the target so as to face the target; and a target high-frequency power supply connected to the target and configured to supply high-frequency power to the target in order to generate a high-frequency electric field between the opposing electrode and the target, wherein the distance between the target and the workpiece substrate during a sputtering process being 30 mm or less.
申请公布号 KR20140133513(A) 申请公布日期 2014.11.19
申请号 KR20147021919 申请日期 2013.02.12
申请人 TOKYO ELECTRON LIMITED 发明人 MIZUNO SHIGERU;GOMI ATSUSHI;MITASHITA TETSUYA;HATANO TATSUO;MIZUSAWA YASUSHI
分类号 H01L21/203;C23C14/34;C23C14/35 主分类号 H01L21/203
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