Method for manufacturing MEMS device

摘要

A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein; forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon; etching the first sacrificial layer to form a first recess (301); covering and forming a first dielectric layer (401) on the surface of the first sacrificial layer; thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer; forming a micromechanical structure layer (500) on the surface of the first sacrificial layer and exposing the first sacrificial layer, wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.

主权项

1. A method for forming a MEMS device, comprising:
providing a semiconductor substrate with a metal interconnection structure formed therein; forming a first sacrificial layer, including amorphous carbon, on the semiconductor substrate; etching the first sacrificial layer to form a first groove; forming a first dielectric layer overlaying the first sacrificial layer and the first groove; polishing the first dielectric layer until the first sacrificial layer is exposed by using a chemical mechanical polishing process; forming a micro mechanical component layer on the first sacrificial layer, where a portion of the first sacrificial layer is exposed, and a portion of the micro mechanical component layer is connected with the first dielectric layer; forming a second sacrificial layer, comprising a material same as that of the first sacrificial layer, on the micro mechanical component layer and the first sacrificial layer; etching the second sacrificial layer to form a second groove; forming a second dielectric layer overlaying the second sacrificial layer; polishing the second dielectric layer until the second sacrificial layer is exposed by using a chemical mechanical polishing process; forming an isolating layer on the second sacrificial layer; etching the isolating layer to form at least one through hole exposing the second sacrificial layer; removing the first and second sacrificial layers through the at least one through hole; and forming a covering layer on the isolating layer, wherein the covering layer covers the at least one through hole.