发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS AND ABNORMALITY DETECTION METHOD OF THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and an abnormality detection method of the apparatus, and a method of manufacturing a semiconductor device which are capable of detecting an abnormal event more reliably.SOLUTION: A semiconductor manufacturing apparatus has: a measurement section 38 which sequentially measures a sputtering current or a sputtering voltage supplied from a DC power source 36 for sputtering to a sputtering electrode 14; and a processing section 40 which detects that an abnormal event occurred in performing sputtering based on the fact that a sputtering current variation &Dgr;I being the amount of change per unit time of sputtering current, a sputtering voltage variation &Dgr;V being the amount of change per unit time of sputtering voltage, a first value (I/&Dgr;I) being a value obtained by dividing the sputtering current by the sputtering current variation, a second value (V/&Dgr;V) being a value obtained by dividing the sputtering voltage by the sputtering voltage variation, or a third value T based on the sum of the first value and the second value shows an abnormal value.
申请公布号 JP2014205880(A) 申请公布日期 2014.10.30
申请号 JP20130083636 申请日期 2013.04.12
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 OBARA NAOKI;NAKAO YOSHIYUKI
分类号 C23C14/34;H01L21/285 主分类号 C23C14/34
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