Lateral Power Semiconductor Device and Method for Manufacturing a Lateral Power Semiconductor Device

摘要

A lateral power semiconductor device includes a semiconductor body having a first surface and a second opposite surface, a first main electrode, a second main electrode, a plurality of switchable semiconductor cells and at least one curved semiconductor portion. The first main electrode includes at least two sections and is arranged on the first surface. The second main electrode is arranged on the first surface and between the two sections of the first main electrode. The plurality of switchable semiconductor cells is arranged between a respective one of the two sections of the first main electrode and the second main electrode and is configured to provide a controllable conductive path between the first main electrode and the second main electrode. The curved semiconductor portion is between the first main electrode and the second main electrode and has increasing doping concentration from the first main electrode to the second main electrode.

主权项

1. A lateral power semiconductor device, comprising:
a semiconductor body having a first surface and a second surface opposite the first surface; a first main electrode comprising at least two sections arranged on the first surface; a second main electrode arranged on the first surface and between the two sections of the first main electrode; a plurality of switchable semiconductor cells arranged between a respective one of the two sections of the first main electrode and the second main electrode and configured to provide a controllable conductive path between the first main electrode and the second main electrode; and at least one curved semiconductor portion between the first main electrode and the second main electrode with increasing doping concentration from the first main electrode to the second main electrode.