发明名称 Method for Manufacturing Magnetoresistance Component
摘要 A method for manufacturing a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including an interconnect structure is formed on the substrate, wherein the interconnect structure comprises a metal pad. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. A patterned magnetoresistance component is formed above the metal damascene structure to electrically connect to the metal damascene structure.
申请公布号 US2014322828(A1) 申请公布日期 2014.10.30
申请号 US201414324617 申请日期 2014.07.07
申请人 Voltafield Technology Corp. 发明人 Liou Fu-Tai;Lee Chien-Min;Liang Chih-Chien;Fu Nai-Chung
分类号 H01L43/12 主分类号 H01L43/12
代理机构 代理人
主权项 1. A method for manufacturing a magnetoresistance component, comprising: providing a substrate; forming a circuit structure layer comprising an interconnect structure on the substrate, the interconnect structure comprising a metal pad; forming a dielectric layer on the circuit structure layer; forming a metal damascene structure in the dielectric layer; and forming a patterned magnetoresistance component above the metal damascene structure to electrically connect to the metal damascene structure.
地址 Zhubei City TW