发明名称 |
Method for Manufacturing Magnetoresistance Component |
摘要 |
A method for manufacturing a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including an interconnect structure is formed on the substrate, wherein the interconnect structure comprises a metal pad. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. A patterned magnetoresistance component is formed above the metal damascene structure to electrically connect to the metal damascene structure. |
申请公布号 |
US2014322828(A1) |
申请公布日期 |
2014.10.30 |
申请号 |
US201414324617 |
申请日期 |
2014.07.07 |
申请人 |
Voltafield Technology Corp. |
发明人 |
Liou Fu-Tai;Lee Chien-Min;Liang Chih-Chien;Fu Nai-Chung |
分类号 |
H01L43/12 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a magnetoresistance component, comprising:
providing a substrate; forming a circuit structure layer comprising an interconnect structure on the substrate, the interconnect structure comprising a metal pad; forming a dielectric layer on the circuit structure layer; forming a metal damascene structure in the dielectric layer; and forming a patterned magnetoresistance component above the metal damascene structure to electrically connect to the metal damascene structure. |
地址 |
Zhubei City TW |