| 发明名称 | Method of forming silicon oxycarbonitride film | ||
| 摘要 | The method of forming a silicon oxycarbonitride film on a base includes stacking a silicon carbonitride film and a silicon oxynitride film on the base to form the silicon oxycarbonitride film. | ||
| 申请公布号 | US8871655(B2) | 申请公布日期 | 2014.10.28 |
| 申请号 | US201213726778 | 申请日期 | 2012.12.26 |
| 申请人 | Tokyo Electron Limited | 发明人 | Suzuki Keisuke;Kadonaga Kentaro;Lee Byoung Hoon;Lee Eun Jo;Son Sung Duk;Jang Jae Hyuk;Park Do Hyun |
| 分类号 | H01L21/31;H01L21/02;C23C8/34;C23C16/24;C23C16/56;C23C28/04;C23C28/00 | 主分类号 | H01L21/31 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A method of forming a silicon oxycarbonitride film on a base, the method comprising stacking a silicon carbonitride film and a silicon oxynitride film on the base to form the silicon oxycarbonitride film. | ||
| 地址 | JP | ||