Process for preparing a silicon carbide part without the need for any sintering additives

摘要

The invention relates to a process for preparation of a part comprising silicon carbide with an average nanometric grain size and a relative density of more than 97%, said process comprising:
a preform formation step by cold compaction of a nanometric silicon carbide powder or the formation of agglomerates of such a powder by granulation of the powder;a spark plasma sintering step of said preform or said agglomerates, without the addition of sintering, at at least one predetermined temperature and pressure so as to obtain the required relative density and average grain size, namely a relative density of more than 97% and a nanometric average grain size.

主权项

1. A process for preparation of a part comprising silicon carbide with an average grain size of less than 100 nm and a relative density of more than 97%, said process comprising:
preparing a nanometric silicon carbide powder having a nanometric average grain size of less than 100 nm by laser pyrolysis; performing a preform formation step by cold compaction in a press of the nanometric silicon carbide powder; and performing a spark plasma sintering step of said preform, without sintering additives, at at least one predetermined temperature consisting of at least one thermal cycle lasting from 5 to 60 minutes for a temperature rise between 15° C./minute and 500° C./minute, so as to reach a maximum heating temperature between 1400° C. and 2000° C., so as to obtain a relative density of more than 97% and said nanometric average grain size, wherein said step of performing a preform formation step by cold compaction is performed by cold isostatic pressure.