发明名称 SEMICONDUCTOR DEVICES AND FABRICATION METHODS THEREOF
摘要 A semiconductor device includes a first semiconductor chip, a first connection structure disposed on a first side of the first semiconductor chip, a second semiconductor chip disposed on a second side of the first semiconductor chip, and a second connection structure disposed between the first and second semiconductor chips, wherein a number of the second connection structures is less than a number of the first connection structures.
申请公布号 US2014312505(A1) 申请公布日期 2014.10.23
申请号 US201414319688 申请日期 2014.06.30
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 Jeong SeYoung;Youn Sunpil;Song Hogeon
分类号 H01L23/48;H01L27/108 主分类号 H01L23/48
代理机构 代理人
主权项 1. A semiconductor device comprising: a substrate; a first semiconductor chip disposed on the substrate having a first through via and a dummy through via; and a second semiconductor chip disposed on the first semiconductor chip, wherein the second semiconductor chip comprises an internal circuit; wherein the first through via is electrically connected to the internal circuit of the second semiconductor chip, wherein the dummy through via is electrically insulated from the internal circuit of second semiconductor chip.
地址 Suwon-si KR
您可能感兴趣的专利