| 摘要 |
A thin-film transistor (TFT), a preparation method thereof, an array substrate and a display device are disclosed. The TFT disclosed in the present invention comprises a source electrode (3), a drain electrode (4), a semiconductor layer (1), a gate electrode (2) and a gate insulating layer (21) and further comprises: a source conductive layer (31) and a drain conductive layer (41) which are disposed on the surface of the semiconductor layer and spaced from each other. The source conductive layer is connected with the source electrode; the drain conductive layer is connected with the drain electrode; and the minimum distance between the source conductive layer and the drain conductive layer is less than the minimum distance between the source electrode and the drain electrode. The TFT is applicable to a display device, in particular, to a LCD or OLED. |
