| 发明名称 |
Restoring ECC syndrome in non-volatile memory devices |
| 摘要 |
A method of restoring an ECC syndrome in a non-volatile memory device having memory cells arranged in a plurality of sectors within a memory cell array, the method comprising identifying a first sector including at least one page having a disabled ECC (error correction code) flag; reading the value of all data bits in said at least one page; calculating values for ECC bits in said at least one page; and writing said data bit values and said calculated ECC bit values to a second sector in the memory cell array. |
| 申请公布号 |
US2014310569(A1) |
申请公布日期 |
2014.10.16 |
| 申请号 |
US201313860542 |
申请日期 |
2013.04.11 |
| 申请人 |
SPANSION LLC |
发明人 |
BLOOM Ilan;GIVANT Amichai;YOGEV Yoav;SHEFI Amit |
| 分类号 |
G06F11/10 |
主分类号 |
G06F11/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of restoring an ECC syndrome in a non-volatile memory device having memory cells arranged in a plurality of sectors within a memory cell array, the method comprising:
identifying a first sector including at least one page having a disabled ECC (error correction code) flag; reading the value of all data bits in said at least one page; calculating values for ECC bits in said at least one page; and writing said data bit values and said calculated ECC bit values to a second sector in the memory cell array. |
| 地址 |
Sunnyvale CA US |
