发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of inhibiting the adhesion of foreign matter to a gas supply channel surface and the pollution of the gas supply channel surface.SOLUTION: A plasma processing apparatus includes: a vacuum case 14; a processing chamber for performing surface treatment of a sample-to-be-processed 2 by plasma; sample-to-be-treated-and-processed installation means 1; an upper electrode 3 that has a gas channel 102 and a large number of micropores 6; a gas shield plate 103 that is arranged within the gas channel 102 of the upper electrode 3 to open/close the micropores 6; and a drive unit 101 for driving the gas shield plate 103.</p> |
申请公布号 |
JP2014179386(A) |
申请公布日期 |
2014.09.25 |
申请号 |
JP20130051010 |
申请日期 |
2013.03.13 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
SAKAI YOSUKE;YOKOGAWA KATANOBU;MORI MASASHI;ARASE TAKAO;HASHIMOTO TAKAHISA |
分类号 |
H01L21/3065;C23C16/44;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|