发明名称 PLASMA PROCESSING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of inhibiting the adhesion of foreign matter to a gas supply channel surface and the pollution of the gas supply channel surface.SOLUTION: A plasma processing apparatus includes: a vacuum case 14; a processing chamber for performing surface treatment of a sample-to-be-processed 2 by plasma; sample-to-be-treated-and-processed installation means 1; an upper electrode 3 that has a gas channel 102 and a large number of micropores 6; a gas shield plate 103 that is arranged within the gas channel 102 of the upper electrode 3 to open/close the micropores 6; and a drive unit 101 for driving the gas shield plate 103.</p>
申请公布号 JP2014179386(A) 申请公布日期 2014.09.25
申请号 JP20130051010 申请日期 2013.03.13
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SAKAI YOSUKE;YOKOGAWA KATANOBU;MORI MASASHI;ARASE TAKAO;HASHIMOTO TAKAHISA
分类号 H01L21/3065;C23C16/44;H05H1/46 主分类号 H01L21/3065
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