发明名称 |
HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES |
摘要 |
Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device. |
申请公布号 |
US2014287545(A1) |
申请公布日期 |
2014.09.25 |
申请号 |
US201414296144 |
申请日期 |
2014.06.04 |
申请人 |
BinOptics Corporation |
发明人 |
BEHFAR Alex A. |
分类号 |
H01S5/323 |
主分类号 |
H01S5/323 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a packaged photonic device, comprising:
forming on a top surface of a substrate a semiconductor structure comprising an active layer; etching at least one facet in said semiconductor structure; covering all surfaces of said semiconductor structure within 750 nm of said active layer at least one facet with a protective layer of a dielectric or metal material; forming an electrically conductive contact on a top surface of said semiconductor structure; singulating said substrate comprising said semiconductor structure to form a photonic device; and packaging said photonic device in a non-hermetic package. |
地址 |
Ithaca NY US |