发明名称 HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES
摘要 Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
申请公布号 US2014287545(A1) 申请公布日期 2014.09.25
申请号 US201414296144 申请日期 2014.06.04
申请人 BinOptics Corporation 发明人 BEHFAR Alex A.
分类号 H01S5/323 主分类号 H01S5/323
代理机构 代理人
主权项 1. A method of fabricating a packaged photonic device, comprising: forming on a top surface of a substrate a semiconductor structure comprising an active layer; etching at least one facet in said semiconductor structure; covering all surfaces of said semiconductor structure within 750 nm of said active layer at least one facet with a protective layer of a dielectric or metal material; forming an electrically conductive contact on a top surface of said semiconductor structure; singulating said substrate comprising said semiconductor structure to form a photonic device; and packaging said photonic device in a non-hermetic package.
地址 Ithaca NY US
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