| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a SiC single crystal, which can suppress occurrence of a SiC polycrystal in the vicinity of a seed crystal. SOLUTION: The apparatus for manufacturing an SiC single crystal using the solution method includes, in a growth furnace, a seed crystal to grow an SiC single crystal on an SiC seed crystal substrate from a raw material, a supporting shaft to support the seed crystal and conduct heat from the seed crystal to the outside, a crucible to accommodate the raw material, a heat insulating material to prevent heat dissipation from the crucible, and a heat generating member installed inside the heat insulating material to heat the growth furnace interior by generating heat by an energy output from an energy emitting body installed outside the furnace and capable of emitting plural different outputs, wherein a less wettable polycrystal generation inhibiting part is provided. COPYRIGHT: (C)2012,JPO&INPIT |
