Sensor structure for optical performance enhancement

摘要

The present disclosure provides various embodiments of an image sensor device. An exemplary image sensor device includes an image sensing region disposed in a substrate; a multilayer interconnection structure disposed over the substrate; and a color filter formed in the multilayer interconnection structure and aligned with the image sensing region. The color filter has a length and a width, where the length is greater than the width.

主权项

1. An image sensor device comprising:
an image sensing region disposed in a substrate; an inter-layer dielectric layer disposed over the substrate; a multilayer interconnection structure disposed over the inter-layer dielectric layer and the substrate; a passivation layer disposed over the multilayer interconnection structure, wherein the passivation layer forms opposing sidewalls of a recess; a color filter continuously extending through the passivation layer, the multilayer interconnect structure, and the inter-layer dielectric layer and aligned with the image sensing region, the color filter having a length and a width, wherein the length is greater than the width; and a lens disposed within the recess over the color filter, wherein the lens includes a top surface facing away from the substrate, and wherein the passivation layer forming the opposing sidewalls of the recess extends away from the substrate beyond the top surface of the lens, wherein the passivation layer is a single contiguous dielectric layer extending from beyond the top surface of the lens to the image sensing region in the substrate such that the passivation layer physically contacts the image sensing region in the substrate.