TRANSISTOR TUNNEL A FORT COURANT PAR AMPLIFICATION BIPOLAIRE

摘要

The transistor has a source region (160), a drain region (140), and a gate electrode. A given region among the source region and the drain region includes a semiconductor zone (111) doped with a doping type. The given region includes another semiconductor zone (112) doped with another doping type. A junction is formed with the former doped zone. Another given region among the source region and the drain region includes a third semiconductor zone (113) that is doped with the former doping type. An independent claim is also included for a method for producing a transistor.