OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

A method for manufacturing an oxide semiconductor thin film transistor (TFT) is provided, which includes the steps below. A source electrode and a drain electrode are provided. A patterned insulating layer is formed to partially cover the source electrode and the drain electrode, and expose a portion of the source electrode and a portion of the drain electrode. An oxide semiconductor layer is formed to contact the portion of the source electrode and the portion of the drain electrode. A gate electrode is provided. A gate dielectric layer positioned between the oxide semiconductor layer and the gate electrode is provided. An oxide semiconductor TFT is also provided herein.

主权项

1. A method for manufacturing an oxide semiconductor thin film transistor (TFT), comprising the steps of:
providing a source electrode and a drain electrode; forming a patterned insulating layer to partially cover the source electrode and the drain electrode, wherein the patterned insulating layer includes at least one opening exposing a portion of the source electrode and a portion of the drain electrode, and the opening has a length greater than the distance between the source electrode and the drain electrode; forming an oxide semiconductor layer to contact the portion of the source electrode and the portion of the drain electrode; providing a gate electrode; and providing a gate dielectric layer positioned between the oxide semiconductor layer and the gate electrode.