| 摘要 |
Disclosed is a substrate processing device. The substrate processing device by an embodiment of the present invention comprises a process chamber which provides a reaction space of a substrate by the combination of an upper chamber and a lower chamber; a support member which is installed at the lower chamber and in which the substrates are laid on the same plane; division bars which rotates the support member to expose the substrates mounted on the support member to the gas supplied to the domains; a first gas processing means which supplies gas to each domain at the center part of the process chamber and discharges gas at the edge of the process chamber; and a second gas processing means which supplies gas to each domain at the edge of the process chamber and discharges each gas at the edge of the process chamber. |
