发明名称 |
NITRIDE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen. |
申请公布号 |
US2014213045(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
US201414230031 |
申请日期 |
2014.03.31 |
申请人 |
Electronics and Telecommunications Research Institute |
发明人 |
BAE Sung Bum;NAM Eun Soo;MUN Jae Kyoung;KIM Sung Bock;KIM Hae Cheon;JU Chull Won;KO Sang Choon;LIM Jong-Won;AHN Ho Kyun;CHANG Woo Jin;PARK Young Rak |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a nitride electronic device, comprising:
forming an epitaxial structure in which a low temperature buffer layer, a first semi-insulating nitride layer, a first channel layer and a first barrier layer are sequentially stacked on a substrate; stacking a first dielectric layer for forming a pattern on the first barrier layer and partially etching the first barrier layer, the first channel layer and the first semi-insulating nitride layer; regrowing a second semi-insulating nitride layer on the etched first semi-insulating nitride layer; sequentially stacking a second channel layer and a second barrier layer on the second semi-insulating nitride layer; stacking a second dielectric layer for forming a pattern on the second barrier layer and etching the second barrier layer, the second channel layer and the second semi-insulating nitride layer; and removing the first and second dielectric layers and stacking metal electrode layers on the first and second barrier layers. |
地址 |
Daejeon KR |