| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency power amplifier for restricting a closed loop oscillation of a transistor without enlarging the chip size. SOLUTION: A gate field unit (11), in which each gate electrode (14) of two or more transistors is connected in parallel, is separated into a plurality of gate field units (11a). Each separated gate field unit (11a) is connected in parallel with a prescribed number of gate electrodes (14). Then, element separation is carried out by inserting a resistor wire (19) for each transistor cell unit (20), in which a prescribed number of gate electrodes connected in parallel are gathered in gross. The resistor wire (19) is made of the same metallic material as the gate electrode (14) and is formed in the same manufacturing step. COPYRIGHT: (C)2005,JPO&NCIPI
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