发明名称 METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING SHORT PULSE LIGHT IRRADIATION
摘要 A method for depositing an atomic layer using light irradiation includes a step of depositing a thin film on a substrate by an atomic layer deposition process and a step of irradiating the thin film with light for a predetermined time during the atomic layer deposition process. A light irradiating time can be positioned, during the atomic layer deposition process, in one or more among time periods of before a process of introducing a material precursor, during the process of introducing the material precursor, between the process of introducing the material precursor and a process of introducing a reaction precursor, during the process of introducing the reaction precursor, and after the process of introducing the reaction precursor.
申请公布号 KR20140091149(A) 申请公布日期 2014.07.21
申请号 KR20130002446 申请日期 2013.01.09
申请人 IVWORKS CO., LTD. 发明人 OH, JAE EUNG;SEO, SANG JOON
分类号 C23C16/448;C23C16/44;H01L21/205 主分类号 C23C16/448
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