发明名称 Electrostatic discharge protection circuit
摘要 An electrostatic discharge protection circuit includes a diode chain coupled between a power supply voltage end and a control node, a control voltage generator configured to generate a control voltage in response to a first current flowing through the diode chain, and a discharger configured to discharge a second current from the power supply voltage end to a ground voltage end in response to the control voltage, wherein the diode chain includes a plurality of P-well regions formed in an N-well region, diodes formed in the respective P-well regions, and a resistor coupled between the diodes.
申请公布号 US8780511(B2) 申请公布日期 2014.07.15
申请号 US201113196258 申请日期 2011.08.02
申请人 Hynix Semiconductor Inc. 发明人 Moon Jung-Eon
分类号 H02H9/00 主分类号 H02H9/00
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. An electrostatic discharge protection circuit, comprising: a diode chain coupled between a power supply voltage end and a control node; a control voltage generator configured to generate a control voltage to the control node in response to a first current flowing through the diode chain; a discharger configured to discharge a second current from the power supply voltage end to a ground voltage end in response to the control voltage, wherein the diode chain comprises a plurality of P-well regions formed in an N-well region, diodes formed in the respective P-well regions, and a resistor coupled between the diodes, wherein the diodes include a PN junction formed by implanting an N-type impurity into a first upper portion of the each P-well region; and a plurality of parasitic polar transistors each having an emitter in the first upper portion of the P-well region, a base in the P-well region, and a collector in the N-well region.
地址 Gyeonggi-do KR