发明名称 |
Electrostatic discharge protection circuit |
摘要 |
An electrostatic discharge protection circuit includes a diode chain coupled between a power supply voltage end and a control node, a control voltage generator configured to generate a control voltage in response to a first current flowing through the diode chain, and a discharger configured to discharge a second current from the power supply voltage end to a ground voltage end in response to the control voltage, wherein the diode chain includes a plurality of P-well regions formed in an N-well region, diodes formed in the respective P-well regions, and a resistor coupled between the diodes. |
申请公布号 |
US8780511(B2) |
申请公布日期 |
2014.07.15 |
申请号 |
US201113196258 |
申请日期 |
2011.08.02 |
申请人 |
Hynix Semiconductor Inc. |
发明人 |
Moon Jung-Eon |
分类号 |
H02H9/00 |
主分类号 |
H02H9/00 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. An electrostatic discharge protection circuit, comprising:
a diode chain coupled between a power supply voltage end and a control node; a control voltage generator configured to generate a control voltage to the control node in response to a first current flowing through the diode chain; a discharger configured to discharge a second current from the power supply voltage end to a ground voltage end in response to the control voltage, wherein the diode chain comprises a plurality of P-well regions formed in an N-well region, diodes formed in the respective P-well regions, and a resistor coupled between the diodes, wherein the diodes include a PN junction formed by implanting an N-type impurity into a first upper portion of the each P-well region; and a plurality of parasitic polar transistors each having an emitter in the first upper portion of the P-well region, a base in the P-well region, and a collector in the N-well region. |
地址 |
Gyeonggi-do KR |