| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a seed layer which can respond to a reduction request in a deposition film process temperature, which can maintain and increase the accuracy of surface roughness of a thin film formed on a seed layer, and which can improve an in-plane uniformity.SOLUTION: A formation method of a seed layer comprises: a step (step 11) in which aminosilane based gas is supplied to a heated base-surface to form a first seed layer on the base surface; and a step (step 12) in which high order silane gas higher than disilane is supplied to the heated base-surface to form a second seed layer on the first seed layer formed on the base surface. A treatment temperature in the step 11 is less than 400°C and is a temperature at which at least silicon included in the aminosilane based gas can be absorbed on the base surface or more. A treatment temperature in the step 12 is less than 400°C and is a temperature at which at least silicon included in the high order silane gas higher than disilane can be absorbed on the first seed layer formed on the base surface or more. |
