WAFER PRODUCT AND GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a wafer product that includes an active layer grown on a gallium oxide substrate and allows improving light-emission intensity.SOLUTION: A buffer layer 13 composed of group III nitride is grown on a primary surface 11a of a gallium oxide substrate 11 at a temperature of 600 degrees Celsius. After the growth of the buffer layer 13, the gallium oxide substrate 11 and the buffer layer 13 are exposed in an atmosphere of a growth furnace 10 at a temperature of 1050 degrees Celsius while supplying a gas G2 containing hydrogen and nitrogen to the growth furnace 10. The deposition of a group III nitride semiconductor layer 15 is performed on a modified buffer layer. The modified buffer layer includes, for example, voids. The group III nitride semiconductor layer 15 can be composed of GaN and AlGaN. A wafer product includes a laminated body composed of group III nitride on the gallium oxide substrate 11 and has voids provided at the interface between the laminated body and the gallium oxide substrate 11.