| 发明名称 |
GRAPHENE STRUCTURE, GRAPHENE DEVICE INCLUDING SAME, AND METHOD OF MANUFACTURING GRAPHENE STRUCTURE |
| 摘要 |
A method of manufacturing a graphene structure, the graphene structure, and a graphene device including the graphene structure, include depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate. The composite layer includes a metal. |
| 申请公布号 |
US2014175458(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201313924953 |
申请日期 |
2013.06.24 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
AHN Joung-real;SHIN Ha-chul;SONG In-kyung |
| 分类号 |
H01L21/283;H01L29/43 |
主分类号 |
H01L21/283 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a graphene structure, the method comprising:
depositing a metal layer over a silicon carbide substrate; and performing, at a first temperature, a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and a graphene layer on the silicon carbide substrate, the composite layer including a metal. |
| 地址 |
Suwon-si KR |
