| 摘要 |
The present invention relates to methods of fabricating electronic devices such as thin film transistor (TFT) structures using laser ablation for selective patterning. A method of fabricating an organic electronic device on a substrate (1), said organic electronic device having a structure including an upper conductive layer (5) and an underlying layer (4) immediately beneath said upper conducting layer and with at least one solution processable semiconducting layer (3), the method comprising patterning said upper conductive layer of said structure by laser ablation, and wherein said laser ablating comprises repeatedly removing portions of said layer of material at substantially the same spatial position to expose said underlying layer using repeated laser pulses, each said pulse having a duration of less than 1ns. |
