| 发明名称 |
NON-PLASMA DRY ETCHING APPARATUS |
| 摘要 |
A non-plasma dry etching apparatus is capable of forming textures uniformly only on one side of a silicon substrate. The non-plasma dry etching apparatus includes a stage on which a silicon substrate is placed is used as a base including plural layers. The plural layers include an electrostatic chuck layer, a heat-resistant glass layer and a space layer from the side on which the silicon substrate is placed. |
| 申请公布号 |
US2014166206(A1) |
申请公布日期 |
2014.06.19 |
| 申请号 |
US201314073870 |
申请日期 |
2013.11.07 |
| 申请人 |
Panasonic Corporation |
发明人 |
YAMAGUCHI NAOSHI;TANABE HIROSHI;NAKAYAMA ICHIRO |
| 分类号 |
H01L21/67 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-plasma dry etching apparatus comprising:
a processing container; a nozzle spraying gas into the processing container; a gas cylinder connected to the nozzle; a pump discharging gas inside the processing container; a regulating valve controlling an inside of the processing container to a given pressure; and a stage arranged inside the processing container and on which a silicon substrate is placed, wherein the stage is a base formed by plural layers, including an electrostatic chuck layer, a heat-resistant glass layer and a space layer from the side on which the silicon substrate is placed.
|
| 地址 |
Osaka JP |
