Light emitting device with an electrode having a through-holes

摘要

According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.

主权项

1. A semiconductor light emitting device, comprising:
a first electrode layer having a metal portion, a plurality of through-holes being provided in the metal portion, each of the through-holes having an opening having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers; a second electrode layer stacked with the first electrode layer along a stacked direction, the second electrode layer being light-reflective; a first semiconductor layer of a first conductivity type provided between the first electrode layer and the second electrode layer; a second semiconductor layer of a second conductivity type provided between the first semiconductor layer and the second electrode layer, the second conductivity type being different from the first conductivity type; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; and a first intermediate layer provided between the second semiconductor layer and the second electrode layer, the first intermediate layer being transmissive with respect to light emitted from the light emitting layer, the first intermediate layer including:
a plurality of first contact portions to provide electrical contact having a first electrical resistance between the second electrode layer and the second semiconductor layer; anda first non-contact portion juxtaposed with the first contact portions in a first plane perpendicular to the stacking direction to provide a second electrical resistance between the second electrode layer and the second semiconductor layer, the second electrical resistance being higher than the first electrical resistance.