| 摘要 |
A TFT and a method for fabricating the same are provided to solve the problem that a side of a nano wire is contacted with the upper part of source/drain electrodes when forming a semiconductor layer aligning to a specific direction by forming electric field between electrodes. A gate electrode(20) is formed on a substrate. A first insulating layer(40) is formed on the substrate including the gate electrode. A source electrode, and drain electrode are formed on the insulating layer facing the gate electrode, and defines channel region. A second insulating layer is formed on the source electrode and drain electrode. A second insulating layer is selectively removed in order to expose the channel region. The nano wire dispersion solution is coated on the substrate. The aligned nano wire semiconductor layer is formed on the channel region by forming electric field between the source electrode, and drain electrode. |
