NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

Provided is a nitride semiconductor light-emitting element having a structure capable of reducing the fluctuation in forward voltage (Vf) associated with energization. Electrons from an n-type cladding layer (23) are supplied to an active layer (15). When carrier overflow occurs, electrons overflow from the active layer (15) and propagate through a second InGaN layer (25a) of a center semiconductor region (19) to reach a second hetero interface (HJ2). Misfit dislocation is formed in a second group III nitride semiconductor region (17) on the second hetero interface (HJ2). The energy generated by non-radiative recombination is large enough to generate a reaction that causes activated p-type dopants to recombine with residual hydrogen, and free residual hydrogen combines with the already-activated p-type dopants to work as acceptor killers. However, the overflow electrons which have reached the second hetero interface (HJ2) disappear due to the non-radiative recombination at misfit dislocation.