SEMICONDUCTOR LASER ELEMENT

摘要

A semiconductor laser element includes: a light emitting layer of a nitride semiconductor that is placed above a substrate of GaN and has a refractive index higher than the substrate, wherein the semiconductor laser element further includes the following layers between the substrate and the light emitting layer in an order from the substrate: a first nitride semiconductor layer of AlGaN; a second nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN; and a fourth nitride semiconductor layer of AlGaN having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer.

主权项

1. A semiconductor laser element comprising:
a substrate of GaN; a first nitride semiconductor layer of AlGaN on or above the substrate; a second nitride semiconductor layer of AlGaN on or above the first nitride semiconductor layer, the second nitride semiconductor layer having an Al ratio higher than the first nitride semiconductor layer; a third nitride semiconductor layer of an InGaN on or above the second nitride semiconductor layer; and a fourth nitride semiconductor layer of AlGaN on or above the third nitride semiconductor layer, the fourth nitride semiconductor layer having an Al ratio higher than the first nitride semiconductor layer and having a thickness greater than the second nitride semiconductor layer; and a light emitting layer of a nitride semiconductor on or above the fourth nitride semiconductor layer, the light emitting layer having a refractive index higher than the substrate.