发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device includes irradiating light to an effective region of a semiconductor substrate. A wavelength of the light is a wavelength adapted so that light absorptance of the semiconductor substrate increases if an intensity of the light increases. The light is irradiated so that a focus point of the light is made within the semiconductor substrate in the irradiating. |
申请公布号 |
US8748236(B2) |
申请公布日期 |
2014.06.10 |
申请号 |
US201013578131 |
申请日期 |
2010.11.10 |
申请人 |
Toyota Jidosha Kabushiki Kaisha |
发明人 |
Tanida Atsushi |
分类号 |
H01L21/268;H01L21/761;H01L29/739;H01L21/78;H01L29/32;H01L27/12 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor device, comprising:
irradiating light to a semiconductor substrate, wherein a wavelength of the light is a wavelength adapted so that light absorptance of the semiconductor substrate increases if an intensity of the light increases, and the light is irradiated so that a focus point of the light is made in a region which is within the semiconductor substrate and, dividing the semiconductor substrate into semiconductor devices so that said region is included in at least an internal portion of a semiconductor layer of at least one of the semiconductor device, wherein the internal portion is not located at a surface of the semiconductor layer, wherein an IGBT is formed in the semiconductor substrate, and the focus point is made within a drift region of the IGBT.
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地址 |
Toyota-Shi JP |