METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD FOR MANUFACTURING SOLID STATE IMAGE SENSOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial silicon wafer capable of suppressing metal pollution by exerting higher gettering capability, and reducing lamination defects in an epitaxial layer.SOLUTION: A method for manufacturing an epitaxial silicon wafer comprises: a first step for forming a modified layer 18 in which composing elements of a cluster ion 16 are solidly solved therein, on a surface 10A of a silicon wafer 10, by irradiating the cluster ion 16 to the silicon wafer 10 having an oxygen concentration of 16×10atoms/cm(ASTM F121-1979) or less; and a second step for forming an epitaxial silicon layer 20 on the modified layer 18 of the silicon wafer 10.