发明名称 |
Light emitting diode, light emitting device package including the same and lighting system |
摘要 |
A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively. |
申请公布号 |
US8723158(B2) |
申请公布日期 |
2014.05.13 |
申请号 |
US201213368133 |
申请日期 |
2012.02.07 |
申请人 |
JANG JUNG HUN;LEE JEONG SIK;YIM JEONG SOON;KIM BYEOUNG JO;NAM SEUNG KEUN;LG INNOTEK CO., LTD. |
发明人 |
JANG JUNG HUN;LEE JEONG SIK;YIM JEONG SOON;KIM BYEOUNG JO;NAM SEUNG KEUN |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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