发明名称 NON-VOLATILE MEMORY ARRAY AND METHOD OF USING SAME FOR FRACTIONAL WORD PROGRAMMING
摘要 A non-volatile memory device that includes N planes (102a, 102b) of non-volatile memory cells (where N is an integer greater than 1). Each plane of non-volatile memory cells (10) includes a plurality of memory cells configured in rows (22) and columns (20). Each of the N planes includes gate lines (26, 14, 28) that extend across the rows of the memory cells therein but do not extend to others of the N planes of non-volatile memory cells. A controller is configured to divide each of a plurality of words of data into N fractional-words, and program each of the N fractional-words of each word of data into a different one of the N planes of non-volatile memory cells. The controller uses a programming current and a program time period for the programming, and can be configured to vary the programming current by a factor and inversely vary the program time period by the factor.
申请公布号 WO2014062435(A1) 申请公布日期 2014.04.24
申请号 WO2013US64013 申请日期 2013.10.09
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 TRAN, HIEU, VAN;LY, ANH;VU, THUAN;NGUYEN, HUNG, QUOC
分类号 G11C16/10;G11C5/14;G11C8/08;G11C11/56;G11C16/08 主分类号 G11C16/10
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