发明名称 |
Finfet structure and method to adjust threshold voltage in a finfet structure |
摘要 |
<p>FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.</p> |
申请公布号 |
GB201404141(D0) |
申请公布日期 |
2014.04.23 |
申请号 |
GB20140004141 |
申请日期 |
2012.09.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
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