| 摘要 |
A semiconductor device (101) is provided with: a substrate (1); a thin film transistor (10) which has an oxide semiconductor layer (6) that serves as an active layer; a protective layer (11) which covers the thin film transistor; metal layers (9d, 9t) which are arranged between the protective layer (11) and the substrate (1); transparent conductive layers (13, 13t) which are formed on the protective layer (11); and connection parts (20, 30) for electrically connecting the metal layers (9d, 9t) with the transparent conductive layers (13, 13t). The connection parts (20, 30) have oxide connection layers (6a, 6t) that are formed of the same oxide film as the oxide semiconductor layer (6) and have a lower electrical resistance than the oxide semiconductor layer (6). The metal layers (9d, 9t) are electrically connected to the transparent conductive layers (13, 13t) via the oxide connection layers (6a, 6t). |
