ANTIMONY-RICH HIGH-SPEED PHASE-CHANGE MATERIAL FOR USE IN PHASE-CHANGE MEMORY DEVICE, MANUFACTURING METHOD FOR THE MATERIAL, AND APPLICATION THEREOF

摘要

An antimony-rich high-speed phase-change material for use in a phase-change memory device, a manufacturing method for the material, and an application thereof. The antimony-rich high-speed phase-change material for use in the phase-change memory device has the chemical formula of: Ax (Sb2Te)1-x , where x is the atomic percent, A is selected from W, Ti, Ta, or Mn, and 0 < x < 0.5. The phase-change material is similar to a common GeSbTe material and facilitates the implementation of high-density storage. The material is provided with a reversible phase change under the effects of an external electrically-driven nanosecond pulse. The phase-change speed of the W-Sb-Te phase-change material is three times that of the GeSbTe material, thus facilitating the implementation of high-speed phase-change memory device.