发明名称 |
METHODS OF FORMING A PATTERN |
摘要 |
A method includes forming a hydrophilic guide layer, a DBARC layer and a photoresist film. A portion of the photoresist film and DBARC layer is exposed to form exposed and unexposed portions. The unexposed photoresist film is removed to form a photoresist pattern including the exposed photoresist film portion. A neutral layer is formed on the photoresist pattern. The photoresist pattern and the DBARC layer of the exposed portion are removed to form first opening portions exposing the guide layer. A block copolymer layer includes a block copolymer having first and second polymer blocks coated on the neutral layer while filling the first opening portions. The block copolymer layer is microphase separated to form a pattern layer including first and second patterns. A pattern including one polymer block is removed to form a pattern mask. The object layer is etched to form a pattern including second opening portions. |
申请公布号 |
US2014061154(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201313905662 |
申请日期 |
2013.05.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM EUN-SUNG;NAM JAE-WOO;SHIN CHUL-HO;YI SHI-YONG |
分类号 |
G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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