| 发明名称 |
Manufacturing method of a semiconductor device |
| 摘要 |
There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode. |
| 申请公布号 |
US8652854(B2) |
申请公布日期 |
2014.02.18 |
| 申请号 |
US201213417811 |
申请日期 |
2012.03.12 |
| 申请人 |
TAKAMATSU TOMOHIRO;WATANABE JUNICHI;NAKAMURA KO;WANG WENSHENG;SATO NAOYUKI;DOTE AKI;NOMURA KENJI;HORII YOSHIMASA;KURASAWA MASAKI;TAKAI KAZUAKI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
TAKAMATSU TOMOHIRO;WATANABE JUNICHI;NAKAMURA KO;WANG WENSHENG;SATO NAOYUKI;DOTE AKI;NOMURA KENJI;HORII YOSHIMASA;KURASAWA MASAKI;TAKAI KAZUAKI |
| 分类号 |
H01L21/00;H01L21/8238;H01L21/02;H01L21/316;H01L21/8234;H01L21/8246;H01L27/06;H01L27/092;H01L27/10;H01L27/105 |
主分类号 |
H01L21/00 |
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