| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique that enables stable DC sputtering and stable and rapid sputtering with high applied power by improving the problems of heat retention and dispersion of volatile materials because of high heat conductivity and low electrical resistivity of sputtering target.SOLUTION: A sintered compact target comprising elements of (A), (B) and (C) as major components having a heat conductivity of 2.5 W/mK or more and an oxygen concentration of 5000 ppm or more: (A) one or more chalcogenide elements selected from S, Se and Te ; (B) one or more group Vb elements selected from Bi, Sb, As, P and N; and (C) one or more group IVb elements or group IIIb elements selected from Ge, Si, C, Ga and In. The electrical resistivity of the sintered compact target is 0.26 m&OHgr; cm or less, preferably 0.22 m&OHgr; cm or less. |
