| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting element.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, a light-emitting layer, and first and second intermediate layers. The light-emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light-emitting layer includes a plurality of barrier layers containing AlInGaN and well layers containing AlInGaN (xw≤xb and yb<yw) therebetween. The first intermediate layer is provided between the light-emitting layer and the p-type semiconductor layer and contains AlInGaN (xb≤xa and ya<yw). The second intermediate layer includes a first portion and a second portion. The first portion is in contact with one of the barrier layers and contains AlInGaN (xw<x1 and ya<y1<yw). The second portion is in contact with the first intermediate layer and contains AlInGaN (xw<x2 and ya≤y2<y1). |
