发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY METHOD AND APPARATUS THEREFOR
摘要 PROBLEM TO BE SOLVED: To enhance drawing accuracy by suppressing occurrence of beam irradiation position deviation due to a magnetic field for a sample having a magnetic film.SOLUTION: In the charged particle beam lithography method for a sample having a magnetic film, magnetic field distribution on a sample 21 is measured, positional deviation amount of a charged particle beam is calculated at each position on the sample 21 based on the measured magnetic field distribution, a position correction amount and drawing conditions for irradiating a desired position with a charged particle beam are calculated based on the calculated positional deviation amount, and then a desired pattern is drawn on the sample based on the position correction amount and drawing conditions thus calculated.
申请公布号 JP2014007241(A) 申请公布日期 2014.01.16
申请号 JP20120141025 申请日期 2012.06.22
申请人 TOSHIBA CORP 发明人 NAKAZAWA TAKASHI;NOMA KENJI
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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