| 摘要 |
<p>Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device according to one embodiment of the present invention includes a collector electrode; a first conductive collector region formed on a first surface of the collector electrode; a second conductive drift region formed on a first surface of the collector region; a floating island region formed so that the semiconductor device operates at 1200V-grade breakdown voltages while operating a voltage drop of 2V or less under the on-state; a first conductive base region formed on a first surface of the drift region; a second conductive emitter region selectively formed in the base region; an emitter electrode formed on the base region and a first surface of the emitter region; and a gate electrode separated from the emitter electrode, the emitter region and the base region by an insulation film and embedded from a second surface of the emitter electrode in a direction of the base region.</p> |
