A process for manufacturing a photonic circuit with active and passive structures

摘要

A process for manufacturing a photonic circuit (400) comprises:
- manufacturing on a first wafer (101) a first layer stack comprising an underclad oxide layer (102) and a high refractive index waveguide layer (103);
- patterning the high refractive index waveguide layer (103') to generate a passive photonic structures;
- planarizing the first layer stack with a planarizing oxide layer (104) having a thickness below 300 nanometers above the high refractive index waveguide layer
(103);
- annealing the patterned high refractive index waveguide layer (103") before and/or after the planarizing oxide layer;
- manufacturing on a second wafer (201) a second layer stack comprising a detachable mono-crystalline silicon waveguide layer (203);
- transferring and bonding the first layer stack and the second layer stack;
- manufacturing active photonic devices in the mono-crystalline silicon waveguide layer (203'); and
- realizing evanescent coupling between the mono-crystalline silicon waveguide layer (203') and the high refractive index waveguide layer (103").