| 摘要 |
<p>PURPOSE: A method for fabricating the p-type and n-type doping layers of a solar cell is provided to omit a separate passivation process by using a surface passivation layer as an oxide layer consisting of byproducts generated due to a diffusion process. CONSTITUTION: A crystalline silicon substrate (201) is prepared. A first conductivity type amorphous thin film layer (202) and a first silicon oxide layer (203) are successively laminated on the front surface of the substrate. A second conductivity type amorphous thin film layer (204) is laminated on the front surface of the substrate including the first silicon oxide layer. The first conductivity type impurities of the first conductivity type amorphous thin film layer are diffused into the substrate to form a first conductivity type doping layer (206). The second conductivity type impurities of the second conductivity type amorphous thin film layer are diffused into the substrate to form a second conductivity type doping layer (207).</p> |
