| 摘要 |
A semiconductor crystal body processing method includes providing a semiconductor crystal body, sandwiching the semiconductor crystal body between a pair of conductive pressurizing tools, applying a pulse-like current between the pair of pressurizing tools to heat the semiconductor crystal body to a target temperature equal to or higher than a temperature at which the semiconductor crystal body is plastically deformed by pressurization and lower than its melting point, and applying pressure and a pulse-like current between the pair of pressurizing tools to thereby maintain the temperature of the semiconductor crystal body at the target temperature and mold the semiconductor crystal body into a target shape by plastic deformation. |
