| 摘要 |
A gallium nitride (GaN) substrate hard to break and capable of enhancing a production yield is provided. The GaN substrate comprises a primary surface. The primary surface is tilted at an angle in the range of 20 to 160 degrees with respect to the C-plane of the substrate. The substrate has a fracture toughness of more than or equal to 1.36 MN/m 3/2 . |
