GLASS-CERAMIC SUBSTRATES FOR SEMICONDUCTOR PROCESSING
摘要
Embodiments are directed to glass-ceramic substrates with a III-V semiconductor layer, for example, a GaN layer that can be used in LED lighting devices. The glass-ceramics material is in the anorthite-rutile (CaAl2Si2O8 + TiO2) family or in the cordierite-enstatite (Mg2Al4Si5O18 + MgSiO3) family.
申请公布号
WO2014004079(A1)
申请公布日期
2014.01.03
申请号
WO2013US45299
申请日期
2013.06.12
申请人
CORNING INCORPORATED;BEALL, GEORGE HALSEY;COUILLARD, JAMES GREGORY;MARJANOVIC, SASHA;MERKEL, GREGORY ALBERT
发明人
BEALL, GEORGE HALSEY;COUILLARD, JAMES GREGORY;MARJANOVIC, SASHA;MERKEL, GREGORY ALBERT